Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
Identifieur interne : 000105 ( Russie/Analysis ); précédent : 000104; suivant : 000106Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
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Abstract
The paper describes liquid phase epitaxial growth and characterization of the GaSb- and InAs-related materials for the photodiodes and thermophotovoltaic applications. It was shown that doping of the melt with holmium results in obtaining the high purity GaInAsSb and InAs layers. The passivation with the 1 M Na2S aqueous solution makes it possible to prepare flat growth surfaces of GaSb(100) and InAs(100) substrates after annealing. A reproducible technique has been developed for fabrication of the high-efficiency GaInAsSb/GaAlAsSb and InAs/InAsSbP photodiodes with the long-wavelength photosensitivity edge of 2.4 and 3.8 μm, respectively. Room temperature detectivity in the spectral peak reaches D* = (0.8-1.0) × 10" W-1 cm Hz1/2 for the GalnAsSb/GaAlAsSb photodiodes and D* = (3.0-5.0) x 109 W-1 cm Hz1/2 for the InAs/InAsSbP devices. We have adapted the technology for thermophotovoltaic cells operating at an emitter temperature of 1000-1700 °C.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells</title><author><name sortKey="Kunitsyna, E V" uniqKey="Kunitsyna E">E. V. Kunitsyna</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute RAS</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physical-Technical Institute RAS</wicri:noRegion></affiliation></author><author><name sortKey="Andreev, I A" uniqKey="Andreev I">I. A. Andreev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute RAS</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physical-Technical Institute RAS</wicri:noRegion></affiliation></author><author><name sortKey="Sherstnev, V V" uniqKey="Sherstnev V">V. V. Sherstnev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute RAS</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physical-Technical Institute RAS</wicri:noRegion></affiliation></author><author><name sortKey="L Vova, T V" uniqKey="L Vova T">T. V. L Vova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute RAS</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physical-Technical Institute RAS</wicri:noRegion></affiliation></author><author><name sortKey="Mikhailova, M P" uniqKey="Mikhailova M">M. P. Mikhailova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute RAS</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physical-Technical Institute RAS</wicri:noRegion></affiliation></author><author><name sortKey="Yakovlev, Yu P" uniqKey="Yakovlev Y">Yu. P. Yakovlev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physical-Technical Institute RAS</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Ioffe Physical-Technical Institute RAS</wicri:noRegion></affiliation></author><author><name sortKey="Ahmetoglu, M" uniqKey="Ahmetoglu M">M. Ahmetoglu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Uludag University</s1><s2>16059 Görukle, Bursa</s2><s3>TUR</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>16059 Görukle, Bursa</wicri:noRegion></affiliation></author><author><name sortKey="Kaynak, G" uniqKey="Kaynak G">G. Kaynak</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Uludag University</s1><s2>16059 Görukle, Bursa</s2><s3>TUR</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>16059 Görukle, Bursa</wicri:noRegion></affiliation></author><author><name sortKey="Gurler, O" uniqKey="Gurler O">O. Gurler</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Uludag University</s1><s2>16059 Görukle, Bursa</s2><s3>TUR</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>16059 Görukle, Bursa</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0191897</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0191897 INIST</idno><idno type="RBID">Pascal:11-0191897</idno><idno type="wicri:Area/Main/Corpus">003332</idno><idno type="wicri:Area/Main/Repository">003C57</idno><idno type="wicri:Area/Russie/Extraction">000105</idno></publicationStmt><seriesStmt><idno type="ISSN">0925-3467</idno><title level="j" type="abbreviated">Opt. mater. : (Amst.)</title><title level="j" type="main">Optical materials : (Amsterdam)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term><term>Aqueous solutions</term><term>Binary compounds</term><term>Detectivity</term><term>Holmium</term><term>III-V semiconductors</term><term>Indium Arsenides</term><term>LPE</term><term>Optical materials</term><term>Photodiodes</term><term>Photosensitivity</term><term>Sodium Compounds</term><term>Sulfur Compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photodiode</term><term>Epitaxie phase liquide</term><term>Solution aqueuse</term><term>Photosensibilité</term><term>Température ambiante</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Sodium Composé</term><term>Soufre Composé</term><term>Matériau optique</term><term>Holmium</term><term>Semiconducteur III-V</term><term>InAs</term><term>Na2</term><term>Na2S</term><term>As In</term><term>4270</term><term>Détectivité</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The paper describes liquid phase epitaxial growth and characterization of the GaSb- and InAs-related materials for the photodiodes and thermophotovoltaic applications. It was shown that doping of the melt with holmium results in obtaining the high purity GaInAsSb and InAs layers. The passivation with the 1 M Na<sub>2</sub>S aqueous solution makes it possible to prepare flat growth surfaces of GaSb(100) and InAs(100) substrates after annealing. A reproducible technique has been developed for fabrication of the high-efficiency GaInAsSb/GaAlAsSb and InAs/InAsSbP photodiodes with the long-wavelength photosensitivity edge of 2.4 and 3.8 μm, respectively. Room temperature detectivity in the spectral peak reaches D<sup>*</sup> = (0.8-1.0) × 10" W<sup>-1</sup> cm Hz<sup>1/2</sup> for the GalnAsSb/GaAlAsSb photodiodes and D<sup>*</sup> = (3.0-5.0) x 10<sup>9</sup> W<sup>-1</sup> cm Hz<sup>1/2</sup> for the InAs/InAsSbP devices. We have adapted the technology for thermophotovoltaic cells operating at an emitter temperature of 1000-1700 °C.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-3467</s0></fA01><fA03 i2="1"><s0>Opt. mater. : (Amst.)</s0></fA03><fA05><s2>32</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Selected papers from the 2nd International Conference on Physics of Optical Materials and Devices: ICOM 2009, Herceg Novi, Montenegro, 27-30 August 2009</s1></fA09><fA11 i1="01" i2="1"><s1>KUNITSYNA (E. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>ANDREEV (I. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>SHERSTNEV (V. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>L'VOVA (T. V.)</s1></fA11><fA11 i1="05" i2="1"><s1>MIKHAILOVA (M. P.)</s1></fA11><fA11 i1="06" i2="1"><s1>YAKOVLEV (Yu. P.)</s1></fA11><fA11 i1="07" i2="1"><s1>AHMETOGLU (M.)</s1></fA11><fA11 i1="08" i2="1"><s1>KAYNAK (G.)</s1></fA11><fA11 i1="09" i2="1"><s1>GURLER (O.)</s1></fA11><fA12 i1="01" i2="1"><s1>VIANA (Bruno)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>DRAMICANIN (Miroslav)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Ioffe Physical-Technical Institute RAS</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Uludag University</s1><s2>16059 Görukle, Bursa</s2><s3>TUR</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA15 i1="01"><s1>Laboratoire de Chimie de la Matière Condensée, ENSCP/UPMC/College de France, 11 rue P&M Curie</s1><s2>75231 Paris</s2><s3>FRA</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Vinča Institute of Nuclear Sciences University of Belgrade, P.P. Box 522</s1><s2>11001 Belgrade</s2><s3>SRB</s3><sZ>2 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>University of Belgrade. Vinča Institute of Nuclear Sciences</s1><s2>11001 Belgrade</s2><s3>SRB</s3><s9>org-cong.</s9></fA18><fA18 i1="02" i2="1"><s1>Université Pierre et Marie Curie. Laboratoire de Chimie de la Matière Condensée de Paris (LCMCP)</s1><s2>Paris</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>1573-1577</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22598</s2><s5>354000192471970030</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0191897</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Optical materials : (Amsterdam)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The paper describes liquid phase epitaxial growth and characterization of the GaSb- and InAs-related materials for the photodiodes and thermophotovoltaic applications. It was shown that doping of the melt with holmium results in obtaining the high purity GaInAsSb and InAs layers. The passivation with the 1 M Na<sub>2</sub>S aqueous solution makes it possible to prepare flat growth surfaces of GaSb(100) and InAs(100) substrates after annealing. A reproducible technique has been developed for fabrication of the high-efficiency GaInAsSb/GaAlAsSb and InAs/InAsSbP photodiodes with the long-wavelength photosensitivity edge of 2.4 and 3.8 μm, respectively. Room temperature detectivity in the spectral peak reaches D<sup>*</sup> = (0.8-1.0) × 10" W<sup>-1</sup> cm Hz<sup>1/2</sup> for the GalnAsSb/GaAlAsSb photodiodes and D<sup>*</sup> = (3.0-5.0) x 10<sup>9</sup> W<sup>-1</sup> cm Hz<sup>1/2</sup> for the InAs/InAsSbP devices. We have adapted the technology for thermophotovoltaic cells operating at an emitter temperature of 1000-1700 °C.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B70</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Photodiode</s0><s5>11</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Photodiodes</s0><s5>11</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0><s5>30</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>LPE</s0><s5>30</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Solution aqueuse</s0><s5>31</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Aqueous solutions</s0><s5>31</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Photosensibilité</s0><s5>41</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Photosensitivity</s0><s5>41</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Température ambiante</s0><s5>42</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Ambient temperature</s0><s5>42</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Sodium Composé</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Sodium Compounds</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Compuesto</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Soufre Composé</s0><s2>NC</s2><s2>NA</s2><s5>53</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Sulfur Compounds</s0><s2>NC</s2><s2>NA</s2><s5>53</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Compuesto</s0><s2>NC</s2><s2>NA</s2><s5>53</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Matériau optique</s0><s5>57</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Optical materials</s0><s5>57</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Holmium</s0><s2>NC</s2><s5>61</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Holmium</s0><s2>NC</s2><s5>61</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>62</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>62</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Na2</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Na2S</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>4270</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Détectivité</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Detectivity</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>129</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Physics of Optical Materials and Devices (ICOM 2009)</s1><s2>2</s2><s3>Herceg Novi MNE</s3><s4>2009-08-27</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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